| PART |
Description |
Maker |
| 2SJ14510 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
|
| 2SK332007 2SK3320 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK17007 2SK170 |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK170 K170 |
FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
|
TOSHIBA[Toshiba Semiconductor]
|
| SVC383 |
Diffused Junction Type Silicon Composite Varactor
AM Low Voltage Electronic Tuning Applications
|
Sanyo Semicon Device
|
| SVC385 |
Diffused Junction Type Silicon Composite Varactor AM Low Voltage Electronic Tuning Applications
|
Sanyo Semicon Device
|
| 2SK2145 E001440 |
From old datasheet system
N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3320 2SK3320-GR 2SK3320Y |
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| U5ZA40C |
ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONICSYSTEM
TOSHIBA Zener Diode Silicon Diffused-Junction Type
|
TOSHIBA[Toshiba Semiconductor]
|
| SVC203C09 |
Diffused Junction Type Silicon Diode Varactor Diode for FM Low-Voltage Electronic Tuning Use
|
Sanyo Semicon Device
|
| HN3G01J HN3G01 E002017 |
N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR
From old datasheet system
|
http://
Toshiba Semiconductor
|
